In Situ electric field simulation in Metal/Insulator/Metal (MIM) capacitors.

Gaillard, N., Pinzelli, L., Gros-Jean, M., Bsiesy, A.
STMicroelectronics

In recent years, a large variety of high dielectric constant materials has been studied as an alternative to silicon dioxide in order to improve the electrical properties in many integrated devices.

The authors pointed out MIM electrical properties modifications such as current-voltage shift and the decrease in the voltage gap between the different conduction mechanisms voltage threshold while the dielectric roughness was modified. Electric field simulations were also presented in the paper with various triangle shaped metal/insulator interface. Results clearly indicating a link between protrusion shape and electric filed increase.

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