Coupled Mechanical/Piezoelectric/Quantum Simulation of Strained Semiconductor InAs Quantum Dots (QD) Emitting at Long WavelengthJ. Even1, F. Doré1, C. Cornet1, L. Pedesseau1, A. Schliwa2, and D. Bimberg2
1FOTON/INSA, CNRS, Rennes, France
2Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany
The eight-band k.p model of strained zincblende crystals has been extensively used to describe the electronic structure of III-V semiconductor nanostructures.
in the present work, we propose to extend these approaches in order to provide a fast and easy method to evaluate the electronic spectra of narrow-gap semiconductor Quantum Dots.
A complete 2D axi-symmetric model is proposed for the simulation of the electronic, mechanical and first and second order piezoelectric properties of narrow-gap, strained, semiconductor quantum nanostructures emitting at long wavelength.
Comparisons with complete 3D results obtained at TUB are also given.